集成电路(IC)
1.00元/PCS
FKS4004低内阻NMOS管,可搭配PD快充IC使用
更新时间:2018-11-29 09:28 免费会员
深圳市百盛新纪元半导体有限公司
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The FKS4004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
       The FKS4004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

Symbol Parameter Rating Units
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage ±20 V
ID@TA=25 Continuous Drain Current, VGS @ 10V1 10 A
ID@TA=70 Continuous Drain Current, VGS @ 10V1 8 A
IDM Pulsed Drain Current2 34 A
EAS Single Pulse Avalanche Energy3 31 mJ
IAS Avalanche Current 25 A
PD@TA=25 Total Power Dissipation4 1.5 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150

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